FDMS3660S - Asymmetric Dual N-Channel MOSFET

Fairchild Semiconductor

FDMS3660S Datasheet Preview — Preview of FDMS3660S PDF

Datasheet Details

Part number	FDMS3660S
Manufacturer	Fairchild ↗ Semiconductor
File Size	577.12 KB
Description	Asymmetric Dual N-Channel MOSFET
Datasheet	FDMS3660S-FairchildSemiconductor.pdf

FDMS3660S Product details

Description

This device includes two specialized N-Channel MOSFETs in a dual PQFN package. Computing Communications General Purpose Point of Load Notebook VCORE Pin 1 Pin 1 G1 D1 D1 D1 D1 S2 5 Q2 4 D1 PHASE (S1/D2) G2 S2 S2

Features

Q1: N-Channel.
Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A.
Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel.
Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A.
Max rDS(on) = 2.2 mΩ at VGS = 4.5 V, ID = 27 A.
Low inductance packaging shortens rise/fall times, resulting in lower switching losses.
MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing.
RoHS Compliant February 2015.

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Published: Oct 18, 2015 |