FDMS3660S Datasheet, Mosfet, Fairchild Semiconductor

FDMS3660S Features

• Mosfet Q1: N-Channel
• Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
• Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
• Max rDS(on) = 1.8 mΩ at VGS = 10 V, I

PDF File Details

Part number:

FDMS3660S

Manufacturer:

Fairchild Semiconductor

File Size:

577.12kb

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📄 Datasheet

Description:

Asymmetric dual n-channel mosfet. This device includes two specialized N-Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enabl

FDMS3660S Application

• Applications
• Computing
• Communications
• General Purpose Point of Load
• Notebook VCORE Pin 1 Pin 1 G1 D1 D1 D

TAGS

FDMS3660S

Fairchild Semiconductor

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