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FDMS3668S MOSFET

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Description

FDMS3668S PowerTrench® Power Stage FDMS3668S PowerTrench® Power Stage Asymmetric Dual N-Channel MOSFET .
This device includes two specialized N-Channel MOSFETs in a dual PQFN package.

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Features

* Q1: N-Channel
* Max rDS(on) = 8 mΩ at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mΩ at VGS = 4.5 V, ID = 11 A Q2: N-Channel
* Max rDS(on) = 5 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 5.2 mΩ at VGS = 4.5 V, ID = 17 A
* Low inductance packaging shortens rise/fa

Applications

* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE Pin 1 Pin

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