FDMS3604S

N-Channel MOSFET

ON Semiconductor

FDMS3604S Features

* Q1: N

* Channel

* Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A

* Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A Q2: N

* Channel

* Max rDS(on) = 2.6 mW at VGS = 10 V, ID = 23 A

* Max rDS(on) = 3.5 mW at VGS = 4.5 V, ID = 21 A

* Low Inductance Packagin

FDMS3604S General Description

This device includes two specialized N

*Channel MOSFETs in a dual PQFN package. The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power .

FDMS3604S Datasheet (838.17 KB)