Datasheet Details
- Part number
- FDMS3604S
- Manufacturer
- ON Semiconductor ↗
- File Size
- 838.17 KB
- Datasheet
- FDMS3604S-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDMS3604S Description
FDMS3604S MOSFET * N-Channel, POWERTRENCH), Power Stage, Asymetric Dual General .
This device includes two specialized N.
Channel MOSFETs in a
dual PQFN package.
FDMS3604S Features
* Q1: N
* Channel
* Max rDS(on) = 8 mW at VGS = 10 V, ID = 13 A
* Max rDS(on) = 11 mW at VGS = 4.5 V, ID = 11 A
Q2: N
* Channel
* Max rDS(on) = 2.6 mW at VGS = 10 V, ID = 23 A
* Max rDS(on) = 3.5 mW at VGS = 4.5 V, ID = 21 A
* Low Inductance Packagin
FDMS3604S Applications
* Computing
* Communications
* General Purpose Point of Load
* Notebook VCORE
www. onsemi. com
G1 D1 D1 D1 D1 PHASE (S1/D2)
G2 S2 S2 S2
Top
Bottom
PQFN8 5x6, 1.27P CASE 483AJ
MARKING DIAGRAM
$Y&Z&3&K 22CA N7CC
$Y &Z &3 &K 22CA N7CC
= ON Semiconductor Logo = As
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