FDMS3006SDC Datasheet - Fairchild Semiconductor

FDMS3006SDC N-Channel MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient the.

FDMS3006SDC Features

* Dual CoolTM Top Side Cooling PQFN package

* Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 30 A

* Max rDS(on) = 2.7 mΩ at VGS = 4.5 V, ID = 26 A

* High performance technology for extremely low rDS(on)

* SyncFET Schottky Body Diode

* RoHS Compliant General

FDMS3006SDC Datasheet (430.14 KB)