FDMS3572 N-Channel UltraFET Trench MOSFET

Fairchild Semiconductor

Description

www.DataSheet4U.com FDMS3572 N-Channel UltraFET Trench® MOSFET November 2006 FDMS3572 N-Channel UltraFET Trench® MOSFET 80V, 22A, 16.5mΩ .
Max rDS(on) = 16. Max rDS(on) = 24mΩ at VGS = 6V, ID = 8. Typ Qg = 28nC at VGS = 10V.

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Datasheet Specifications

Part number: FDMS3572
Manufacturer: Fairchild Semiconductor
File Size: 554.84 KB
Datasheet: FDMS3572_FairchildSemiconductor.pdf
Description: N-Channel UltraFET Trench MOSFET

Applications

* Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application
* DC - DC Conversion Pin 1 S S S G D D D D D D D 5 6 7 8 4 G 3 S 2 S 1 S D Power 56 (Bottom view) MOSFET Maximum Ratings TA = 25°C unless

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FDMS3572 N-Channel UltraFET Trench MOSFET Fairchild Semiconductor

Fairchild Semiconductor FDMS3572-like datasheet