UltraFET datasheet

Fairchild Semiconductor

FDA2712 - N-Channel UltraFET Trench MOSFET

Jan 29, 2014 · 7 Hits • • • • • • RDS(on) = 29.2mΩ @VGS = 10 V, ID = 40A Fast switching speed Low gate charge High performance trench technology for extremely low RDS(on) H...

Fairchild Semiconductor

ISL9N2357D3ST - 30V/ 0.007 Ohm/ 35A/ N-Channel UltraFET Trench Power MOSFET

Apr 5, 2005 · 6 Hits • rDS(ON) = 0.006Ω Typical, VGS = 10V • Qg Total 85nC Typical, VGS = 10V • Qgd 16nC Typical • CISS 5600pF Typical Packaging ISL9N2357D3ST JEDEC TO-25...

Fairchild

N303AP - N-Channel Logic Level UltraFET Trench MOSFETs 30V / 75A / 3.2m

May 12, 2005 · 6 Hits low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC conver...

Fairchild Semiconductor

HUFA76504DK8 - Logic Level UltraFET Power MOSFET

Jan 14, 2016 · 6 Hits • Ultra Low On-Resistance - rDS(ON) = 0.200Ω, VGS = 10V - rDS(ON) = 0.222Ω, VGS = 5V • Simulation Models - Temperature Compensated PSPICE™ and SABER E...

Fairchild Semiconductor

ISL9N304AP3 - N-Channel Logic Level UltraFET Trench MOSFETs 30V/ 75A/ 4.5m

Apr 5, 2005 · 5 Hits low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC conver...

Fairchild Semiconductor

RFP12N06RLE - 17A/ 60V/ 0.071 Ohm/ N-Channel/ Logic Level UltraFET Power MOSFET

Apr 16, 2005 · 5 Hits JEDEC TO-252AA DRAIN (FLANGE) • Ultra Low On-Resistance - rDS(ON) = 0.063Ω, VGS = 10V - rDS(ON) = 0.071Ω, VGS = 5V • Simulation Models - Temperature ...

Fairchild

N302AP - N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs

May 12, 2005 · 5 Hits low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC conver...

Fairchild Semiconductor

FDS2672 - N-Channel UltraFET

Oct 11, 2006 · 5 Hits Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A Fast switching speed High performance trench technology f...

Fairchild Semiconductor

FDMC2610 - N-Channel UltraFET Trench MOSFET

Nov 22, 2006 · 5 Hits General Description This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor‘s advanced Power Trench process. It has been optimized f...

Fairchild Semiconductor

FDMC2674 - N-Channel UltraFET Trench MOSFET

Nov 22, 2006 · 5 Hits General Description Max rDS(on) = 366mΩ at VGS = 10V, ID = 1A Typ Qg = 12.7nC at VGS = 10V Low Miller charge Low Qrr Body Diode Optimized ef...

Fairchild Semiconductor

FDH5500_F085 - N-Channel UltraFET Power MOSFET

Jan 24, 2012 · 5 Hits Typ rDS(on) = 5.2mΩ at VGS = 10V, ID = 75A Typ Qg(10) = 118nC at VGS = 10V Simulation Models -Temperature Compensated PSPICE and SABERTM Models ...

Fairchild Semiconductor

FDD3672_F085 - N-Channel UltraFET Trench MOSFET

Aug 15, 2015 · 5 Hits Typ rDS(on) = 24mΩ at VGS = 10V, ID = 44A Typ Qg(10) = 24nC at VGS = 10V Low Miller Charge Low Qrr Body Diode Optimized efficiency at high f...

Fairchild Semiconductor

FDS5692Z - N-Channel UltraFET Trench MOSFET

Jan 21, 2016 · 5 Hits This N-Channel UltraFET device has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conve...

Intersil Corporation

HAF70009 - 56A/ 100V/ 0.025 Ohm/ N-Channel UltraFET Power MOSFET

Mar 23, 2005 · 4 Hits • 56A, 100V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.inters...

Fairchild Semiconductor

HRFZ44N - 49A/ 55V/ 0.022 Ohm/ N-Channel UltraFET Power MOSFET

Mar 26, 2005 · 4 Hits • 49A, 55V • Simulation Models - Temperature Compensated PSPICE® and SABER© Electrical Models - Spice and Saber Thermal Impedance Models - www.Fairchi...

Fairchild Semiconductor