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ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET

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www.DataSheet4U.com ISL9N316AD3ST February 2002 ISL9N316AD3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Descriptio.
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.

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Datasheet Specifications

Part number
ISL9N316AD3ST
Manufacturer
Fairchild Semiconductor
File Size
213.00 KB
Datasheet
ISL9N316AD3ST_FairchildSemiconductor.pdf
Description
N-Channel Logic Level PWM Optimized UltraFET

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