ISL9N302AS3ST N-Channel 30V MOSFET

VBsemi

Description

ISL9N302AS3ST-VB ISL9N302AS3ST-VB Datasheet N-Channel 30-V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) 30 RDS(on) () 0.0023 at VGS = 10 V.

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Datasheet Specifications

Part number: ISL9N302AS3ST
Manufacturer: VBsemi
File Size: 252.80 KB
Datasheet: ISL9N302AS3ST-VBsemi.pdf
Description: N-Channel 30V MOSFET

Features

* Trench Power MOSFET
* 100 % Rg and UIS Tested

Applications

* OR-ing
* Server
* DC/DC G D S S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25 °C 150 Continuous Drain Current (TJ = 175 °C) TC =

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ISL9N302AS3ST N-Channel 30V MOSFET VBsemi

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