* low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features
* Fast switching
* rDS(ON) = 0.0052Ω (Typ), V GS = 10V
ISL9N306AD3 Datasheet (254.58 KB)
ISL9N306AD3
Fairchild Semiconductor
254.58 KB
N-channel power mosfet.
ISL9N306AD3 / ISL9N306AD3ST
June 2003
ISL9N306AD3 / ISL9N306AD3ST
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs 30V, 50A, 6mΩ
G.
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