* low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features
* Fast switching
* rDS(ON) = 0.0052Ω (Typ), VGS = 10V
* r
ISL9N306AP3 Datasheet (205.81 KB)
ISL9N306AP3
Fairchild Semiconductor
205.81 KB
N-channel power mosfet.
ISL9N306AP3/ISL9N306AS3ST February 2002 ISL9N306AP3/ISL9N306AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Descrip.
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