* low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies. Features
* Fast switching
* rDS(ON) = 0.0026Ω (Typ), VGS = 10V
* r
ISL9N303AS3ST Datasheet (269.83 KB)
ISL9N303AS3ST
Fairchild Semiconductor
269.83 KB
N-channel power mosfet.
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September 2002
PWM Optimized
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N-Channel Logic Level UltraFET® Tr.
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