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FDMS2572 N-Channel UltraFET Trench MOSFET

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Description

FDMS2572 N-Channel UltraFET Trench® MOSFET December 2012 FDMS2572 N-Channel UltraFET Trench® MOSFET 150V, 27A, 47mΩ .
Max rDS(on) = 47mΩ at VGS = 10V, ID = 4. Max rDS(on) = 53mΩ at VGS = 6V, ID = 4. Low Miller Charge. Optimi.

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Datasheet Specifications

Part number
FDMS2572
Manufacturer
Fairchild Semiconductor
File Size
484.17 KB
Datasheet
FDMS2572_FairchildSemiconductor.pdf
Description
N-Channel UltraFET Trench MOSFET

Applications

* Optimized for rDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC to DC converters. Application
* Distributed Power Architectures and VRMs
* Primary Switch for 24V and 48V Systems
* High Voltage Synchronous Rectifier Pin 1 S S

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