FDMS2508SDC Datasheet | Fairchild Semiconductor

Features - Dual Cool TM Top Side Cooling PQFN package - Max r DS(on) = 1.95 mΩ at VGS = 10 V, ID = 28 A - Max r DS(on) = 2.85 mΩ at VGS = 4.5 V, ID = 22 A - High performance technology for extremely low r DS(on) - Sync FET Schottky Body Diode - Ro HS pliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual Cool TM package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Tele Secondary Side Rectification - High End Server/Workstation Vcore Low Side Pin 1 D5 D6 4G 3S Top Power 56 Bottom MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS EAS dv/dt PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25 °C TC = 25 °C TA = 25 °C Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation TC = 25 °C Power Dissipation TA = 25 °C Operating and Storage Junction Temperature Range Thermal Characteristics D7...