FDMS2508SDC Datasheet - Fairchild Semiconductor

FDMS2508SDC N-Channel Power MOSFET

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient the.

FDMS2508SDC Features

* Dual CoolTM Top Side Cooling PQFN package

* Max rDS(on) = 1.95 mΩ at VGS = 10 V, ID = 28 A

* Max rDS(on) = 2.85 mΩ at VGS = 4.5 V, ID = 22 A

* High performance technology for extremely low rDS(on)

* SyncFET Schottky Body Diode

* RoHS Compliant Gener

FDMS2508SDC Datasheet (388.56 KB)