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FDMS2672 N-Channel MOSFET

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Description

MOSFET * N-Channel, UltraFET Trench 200 V, 20 A, 77 mW FDMS2672 General .
UItraFETt devices combine characteristics that enable benchmark efficiency in power conversion applications.

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Features

* Max rDS(on) = 77 mW at VGS = 10 V, ID = 3.7 A
* Max rDS(on) = 88 mW at VGS = 6 V, ID = 3.5 A
* Low Miller Charge
* This Device is Pb

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