FDS2672 - N-Channel UltraFET

Fairchild Semiconductor

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Datasheet Details

Part number	FDS2672
Manufacturer	Fairchild Semiconductor
File Size	409.57 KB
Description	N-Channel UltraFET
Datasheet	FDS2672_FairchildSemiconductor.pdf

FDS2672 Product details

Description

This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. DC-DC conversion D SO-8 D D D 5 4 3 2 1 www.DataSheet4U.com6 7 Pin 1 S S S G 8 MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current

Features

Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A.
Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A.
Fast switching speed.
High performance trench technology for extremely low rDS(on).
RoHS compliant tm General.

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Published: Oct 11, 2006 |