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FDS2672 N-Channel UltraFET

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Description

www.DataSheet4U.com FDS2672 N-Channel UltraFET Trench® MOSFET August 2006 FDS2672 N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ .
This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimi.

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Datasheet Specifications

Part number
FDS2672
Manufacturer
Fairchild Semiconductor
File Size
409.57 KB
Datasheet
FDS2672_FairchildSemiconductor.pdf
Description
N-Channel UltraFET

Features

* Max rDS(on) = 70mΩ at VGS = 10V, ID = 3.9A
* Max rDS(on) = 80mΩ at VGS = 6V, ID = 3.5A
* Fast switching speed
* High performance trench technology for extremely low rDS(on)

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