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FDS2572 N-Channel MOSFET

FDS2572 Description

MOSFET * N-Channel, UltraFET TRENCH 150 V, 0.047 mW 4.9 A FDS2572 .
UltraFET Devices Combine Characteristics that enable benchmark efficiency in power conversion applications.

FDS2572 Features

* RDS(on) = 0.040 mW (Typ. ), VGS = 10 V
* Qg(TOT) = 29 nC (Typ. ), VGS = 10 V
* Low QRR Body Diode
* Maximized Efficiency at High Frequencies
* UIS Rated
* These Device is Pb

FDS2572 Applications

* Optimized for RDS(on), low ESR, low total and Miller gate charge, these devices are ideal for high frequency DC

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