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FDS2170N3 - N-Channel MOSFET

FDS2170N3 Description

FDS2170N3 May 2003 FDS2170N3 200V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

FDS2170N3 Features

* 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
* Fast switching, low gate charge (26nC typical)
* FLMP SO-8 package: Enhanced thermal performance in indu

FDS2170N3 Applications

* Synchronous rectifier
* DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25oC unless otherwise noted Parameter Ra

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N-Channel MOSFET Fairchild Semiconductor
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