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FDS2170N3 - N-Channel MOSFET

Datasheet Summary

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features

  • 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V.
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.
  • Fast switching, low gate charge (26nC typical).
  • FLMP SO-8 package: Enhanced thermal performance in industry-standard package size.

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Datasheet Details

Part number FDS2170N3
Manufacturer Fairchild Semiconductor
File Size 201.14 KB
Description N-Channel MOSFET
Datasheet download datasheet FDS2170N3 Datasheet
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Full PDF Text Transcription

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FDS2170N3 May 2003 FDS2170N3 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 3.0 A, 200 V.
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