Datasheet Details
- Part number
- FDS2170N3
- Manufacturer
- Fairchild Semiconductor
- File Size
- 201.14 KB
- Datasheet
- FDS2170N3_FairchildSemiconductor.pdf
- Description
- N-Channel MOSFET
FDS2170N3 Description
FDS2170N3 May 2003 FDS2170N3 200V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.
FDS2170N3 Features
* 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V
* High performance trench technology for extremely low RDS(ON)
* High power and current handling capability
* Fast switching, low gate charge (26nC typical)
* FLMP SO-8 package: Enhanced thermal performance in indu
FDS2170N3 Applications
* Synchronous rectifier
* DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed
TA=25oC unless otherwise noted
Parameter
Ra
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