FDS2170N3 Datasheet - Fairchild Semiconductor

FDS2170N3 N-Channel MOSFET

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. .

FDS2170N3 Features

* 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability

* Fast switching, low gate charge (26nC typical)

* FLMP SO-8 package: Enhanced thermal performance in indu

FDS2170N3_FairchildSemiconductor.pdf