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FDS2170N3

N-Channel MOSFET

FDS2170N3 Features

* 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability

* Fast switching, low gate charge (26nC typical)

* FLMP SO-8 package: Enhanced thermal performance in indu

FDS2170N3 General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. .

FDS2170N3 Datasheet (201.14 KB)

Preview of FDS2170N3 PDF

Datasheet Details

Part number:

FDS2170N3

Manufacturer:

Fairchild Semiconductor

File Size:

201.14 KB

Description:

N-channel mosfet.

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FDS2170N3 N-Channel MOSFET Fairchild Semiconductor

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