FDS2170N3 Datasheet, Mosfet, Fairchild Semiconductor

FDS2170N3 Features

  • Mosfet
  • 3.0 A, 200 V. RDS(ON) = 128 mΩ @ VGS = 10 V
  • High performance trench technology for extremely low RDS(ON)
  • High power and current handling capability

PDF File Details

Part number:

FDS2170N3

Manufacturer:

Fairchild Semiconductor

File Size:

201.14kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous o

Datasheet Preview: FDS2170N3 📥 Download PDF (201.14kb)
Page 2 of FDS2170N3 Page 3 of FDS2170N3

FDS2170N3 Application

  • Applications
  • Synchronous rectifier
  • DC/DC converter 5 6 7 8 Bottom-side Drain Contact 4 3 2 1 Absolute Maximum Ratings Symbol

TAGS

FDS2170N3
N-Channel
MOSFET
Fairchild Semiconductor

📁 Related Datasheet

FDS2170N7 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2170N7 May 2003 FDS2170N7 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve .

FDS2070N3 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2070N3 February 2004 FDS2070N3 150V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to im.

FDS2070N7 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2070N7 February 2004 FDS2070N7 150V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to im.

FDS2570 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2570 June 2000 PRELIMINARY FDS2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to.

FDS2572 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2572 October 2001 FDS2572 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET General Description ® UltraFET devices bine characteristic.

FDS2572 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, UltraFET TRENCH 150 V, 0.047 mW 4.9 A FDS2572 Description UltraFET Devices Combine Characteristics that enable benchmark efficienc.

FDS2582 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2582 September 2002 FDS2582 N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ Features • r DS(ON) = 57mΩ (Typ.), VGS = 10V, ID = 4.1A • Qg(tot) = 19.

FDS2582 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 150 V, 4.1 A, 66 mW FDS2582 Features • RDS(on) = 57 mW (Typ.), VGS = 10 V, ID = 4.1 A • Qg(TOT) = 19 nC (Typ.), VGS .

FDS2670 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2670 August 2001 FDS2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve .

FDS2672 - N-Channel UltraFET (Fairchild Semiconductor)
.. FDS2672 N-Channel UltraFET Trench® MOSFET August 2006 FDS2672 N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ Features „ Max.

Stock and price

part
onsemi
MOSFET N-CH 200V 3A 8SOIC
DigiKey
FDS2170N3
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts