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MOSFET – P-Channel, POWERTRENCH)
-30 V, -8.8 A, 20 mW
FDS4435BZ
Description This P−Channel MOSFET is produced using onsemi’s advanced
POWERTRENCH process that has been especially tailored to minimize the on−state resistance.
This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
Features
• Max RDS(on) = 20 mW at VGS = −10 V, ID = −8.8 A • Max RDS(on) = 35 mW at VGS = −4.5 V, ID = −6.7 A • Extended VGSS Range (−25 V) for Battery Applications • HBM ESD Protection Level of ±3.
FDS4435BZ Datasheet
