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FDS4435BZ - P-Channel MOSFET

FDS4435BZ Description

MOSFET * P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ .
This P. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

FDS4435BZ Features

* Max RDS(on) = 20 mW at VGS =
* 10 V, ID =
* 8.8 A
* Max RDS(on) = 35 mW at VGS =
* 4.5 V, ID =
* 6.7 A
* Extended VGSS Range (

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P-Channel MOSFET ON Semiconductor
ON Semiconductor FDS4435BZ-like datasheet