FDS4435BZ P-Channel MOSFET

ON Semiconductor

Description

MOSFET * P-Channel, POWERTRENCH) -30 V, -8.8 A, 20 mW FDS4435BZ .
This P. Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on. sta.

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Datasheet Specifications

Part number: FDS4435BZ
Manufacturer: ON Semiconductor ↗
File Size: 312.48 KB
Datasheet: FDS4435BZ-ONSemiconductor.pdf
Description: P-Channel MOSFET

Features

* Max RDS(on) = 20 mW at VGS =
* 10 V, ID =
* 8.8 A
* Max RDS(on) = 35 mW at VGS =
* 4.5 V, ID =
* 6.7 A
* Extended VGSS Range (

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FDS4435BZ P-Channel MOSFET ON Semiconductor

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