FDS4435BZ_F085 Datasheet, Mosfet, Fairchild Semiconductor

FDS4435BZ_F085 Features

• Mosfet
• Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
• Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
• Extended VGSS range (-25V) for battery applications
• HB

PDF File Details

Part number:

FDS4435BZ_F085

Manufacturer:

Fairchild Semiconductor

File Size:

281.39kb

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📄 Datasheet

Description:

P-channel powertrench mosfet. This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to

FDS4435BZ_F085 Application

• Applications
• HBM ESD protection level of ±3.8KV typical (note 3)
• High performance trench technology for extremely low rDS(on)

TAGS

FDS4435BZ_F085

Fairchild Semiconductor

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