Datasheet4U Logo Datasheet4U.com

FDS4435 - -30V P-Channel MOSFET

Datasheet Summary

Description

This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.

Features

  • VDS (V) =-30V.
  • ID= -8.8 A(VGS = -10V).
  • RDS(ON) ＜ 20mΩ(VGS=-10V).
  • RDS(ON) ＜ 35 mΩ(VGS=-4.5V) FDS4435 -30V P-Channel MOSFET D5 D6 D7 D8 4G 3S 2S 1S SOP-8 MOSFET Maximum RatingsTA = 25°C unless otherwise noted Symbol VDS VGS ID PD EAS TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Pulsed TA = 25°C Power Dissipation Power Dissipation Single Pulse Avalanche Energy TA = 25°C TA = 25°C Operating and Storage.

📥 Download Datasheet

Datasheet preview – FDS4435

Datasheet Details

Part number FDS4435
Manufacturer UMW
File Size 511.65 KB
Description -30V P-Channel MOSFET
Datasheet download datasheet FDS4435 Datasheet
Additional preview pages of the FDS4435 datasheet.

📁 Similar Datasheet

  • FDS4435 - P-Channel MOSFET (Fairchild Semiconductor)
  • FDS4435-NL - P-Channel 30V MOSFET (VBsemi)
  • FDS4435A - P-Channel MOSFET (Fairchild Semiconductor)
  • FDS4435A - P-Channel MOSFET (onsemi)
  • FDS4435BZ - P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDS4435BZ - P-Channel MOSFET (ON Semiconductor)
  • FDS4435BZ - P-Channel MOSFET (VBsemi)
  • FDS4435BZ-F085 - P-Channel Power MOSFET (ON Semiconductor)
  • FDS4435BZ_F085 - P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
  • FDS4410 - N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by UMW

Full PDF Text Transcription

Click to expand full text
UMW R General Description This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • VDS (V) =-30V • ID= -8.8 A(VGS = -10V) • RDS(ON) ＜ 20mΩ(VGS=-10V) • RDS(ON) ＜ 35 mΩ(VGS=-4.
Published: |