FDS4435BZ-F085 - P-Channel Power MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDS4435BZ-F085
Manufacturer	ON Semiconductor
File Size	352.37 KB
Description	P-Channel Power MOSFET
Datasheet	FDS4435BZ-F085 Datasheet
Additional preview pages of the FDS4435BZ-F085 datasheet.

Product details

Description

This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.

Features

Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A.
Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A.
Extended VGSS range (-25V) for battery.

📁 Similar Datasheet

FDS4435BZ - P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDS4435BZ - P-Channel MOSFET (VBsemi)
FDS4435BZ_F085 - P-Channel PowerTrench MOSFET (Fairchild Semiconductor)
FDS4435 - P-Channel MOSFET (Fairchild Semiconductor)
FDS4435 - -30V P-Channel MOSFET (UMW)
FDS4435-NL - P-Channel 30V MOSFET (VBsemi)
FDS4435A - P-Channel MOSFET (Fairchild Semiconductor)
FDS4435A - P-Channel MOSFET (onsemi)

Other Datasheets by ON Semiconductor

FDS4435BZ - P-Channel MOSFET
FDS4435BZ - P-Channel MOSFET
FDS4435BZ - P-Channel MOSFET
FDS4435BZ - P-Channel MOSFET
FDS4435BZ - P-Channel MOSFET
FDS4465 - P-Channel MOSFET

Published: Jan 24, 2023 |