FDS4435BZ-F085

P-Channel Power MOSFET

ON Semiconductor

FDS4435BZ-F085 Features

* Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A

* Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A

* Extended VGSS range (-25V) for battery applications

* HBM ESD protection level of ±3.8KV typical (note 3)

* High performance trench technology for extremely low rD

FDS4435BZ-F085 General Description

This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. D .

FDS4435BZ-F085 Datasheet (352.37 KB)