FDS4435BZ

P-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDS4435BZ Features

* Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A

* Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A

* Extended VGSS range (-25V) for battery applications

* HBM ESD protection level of ±3.8KV typical (note 3)

* High performance trench technology for extremely low rD

FDS4435BZ General Description

This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Pac.

FDS4435BZ Datasheet (249.64 KB)

FDS4435BZ Datasheet Preview — Preview of FDS4435BZ PDF

Datasheet Details

Part number:

FDS4435BZ

Manufacturer:

Fairchild Semiconductor

File Size:

249.64 KB

Description:

P-channel powertrench mosfet.

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FDS4435BZ P-Channel PowerTrench MOSFET Fairchild Semiconductor

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FDS4435BZ Features

FDS4435BZ General Description

Datasheet Details

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Description:

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