FDS4435BZ P-Channel PowerTrench MOSFET

Fairchild Semiconductor

FDS4435BZ Description

FDS4435BZ P-Channel PowerTrench® MOSFET FDS4435BZ P-Channel PowerTrench® MOSFET -30V, -8.8A, 20m: .
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-s.

FDS4435BZ Features

* Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
* Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A

FDS4435BZ Applications

* HBM ESD protection level of ±3.8KV typical (note 3)
* High performance trench technology for extremely low rDS(on)
* High power and current handling capability

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Datasheet Details

Part number: FDS4435BZ
Manufacturer: Fairchild Semiconductor
File Size: 249.64 KB
Datasheet: FDS4435BZ_FairchildSemiconductor.pdf
Description: P-Channel PowerTrench MOSFET

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P-Channel PowerTrench MOSFET Fairchild Semiconductor

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