FDS4465_F085 - P-Channel 1.8V Specified PowerTrench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDS4465_F085
Manufacturer	Fairchild Semiconductor
File Size	496.03 KB
Description	P-Channel 1.8V Specified PowerTrench MOSFET
Datasheet	FDS4465_F085 Datasheet
Additional preview pages of the FDS4465_F085 datasheet.

Product details

Description

This P-Channel 1.8V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. 8V). Power management Load switch Battery protection

Features

13.5 A,.
20 V. RDS(ON) = 8.5 mΩ @ VGS =.
4.5 V RDS(ON) = 10.5 mΩ @ VGS =.
2.5 V RDS(ON) = 14 mΩ @ VGS =.
1.8 V.
Fast switching speed.
High performance trench technology for extremely low RDS(ON).
High current and power handling capability.
Qualified to AEC Q101.
RoHS Compliant DD DDDD DD SO-8 Pin 1 SO-8 SS SS SS GG Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS I.

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Published: Jun 17, 2015 |