Description
MOSFET * Complementary, POWERTRENCH) 60 V FDS4559 General .
This complementary MOSFET device is produced using onsemi’s
advanced PowerTrench process that has been especially tailored to minimize the on.
Features
* Q1: N
* Channel
* 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10 V RDS(on) = 75 mΩ @ VGS = 4.5 V
* Q2: P
* Channel
* 3.5 A,
* 60 V RDS(on) = 105 mΩ @ VGS =
* 10 V RDS(on) = 135 mΩ @ VGS =
Applications
* DC/DC converter
* Power management
* LCD backlight inverter
* This is a Pb
* Free and Halide Free Device
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Symbol
Parameter
Q1 Q2 Unit
VDSS Drain
* Source Voltage
60
* 60 V
VGSS Gate