FDS4501H Complementary PowerTrench Half-Bridge MOSFET

Fairchild Semiconductor

Description

FDS4501H May 2001 FDS4501H Complementary PowerTrench® Half-Bridge MOSFET General .
This complementary MOSFET half-bridge device is produced using Fairchild’s advanced PowerTrench process that has been especially tailored to minimize.

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Datasheet Specifications

Part number: FDS4501H
Manufacturer: Fairchild Semiconductor
File Size: 1.36 MB
Datasheet: FDS4501H_FairchildSemiconductor.pdf
Description: Complementary PowerTrench Half-Bridge MOSFET

Features

* Q1: N-Channel 9.3A, 30V RDS(on) = 18 mΩ @ V GS = 10V RDS(on) = 23 mΩ @ V GS = 4.5V
* Q2: P-Channel
* 5.6A,
* 20V RDS(on) = 46 mΩ @ V GS =
* 4.5V RDS(on) = 63 mΩ @ V GS =

Applications

* DC/DC converter
* Power management
* Load switch
* Battery protection D D D D D D DD Q2 5 6 Q1 4 3 2 1 SO-8 SO-8 S S S G 7 8 2 G S2 TA = 25°C unless otherwise noted Absolute Maximum Ratings Symbol V DSS V GSS ID PD Drain-Source Voltage Gate-Source Vol

FDS4501H Distributors

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FDS4501H Complementary PowerTrench Half-Bridge MOSFET Fairchild Semiconductor

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