FDS2070N7 Datasheet, Mosfet, Fairchild Semiconductor

FDS2070N7 Features

• Mosfet
• 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 mΩ @ VGS = 6.0 V
• High performance trench technology for extremely low RDS(ON)
• High power and curren

PDF File Details

Part number:

FDS2070N7

Manufacturer:

Fairchild Semiconductor

File Size:

176.55kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous o

FDS2070N7 Application

• Applications
• Synchronous rectifier
• DC/DC converter Features
• 4.1 A, 150 V. RDS(ON) = 78 mΩ @ VGS = 10 V RDS(ON) = 88 m

TAGS

FDS2070N7

Fairchild Semiconductor

📁 Related Datasheet

FDS2070N3 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2070N3 February 2004 FDS2070N3 150V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to im.

FDS2170N3 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2170N3 May 2003 FDS2170N3 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve .

FDS2170N7 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2170N7 May 2003 FDS2170N7 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve .

FDS2570 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2570 June 2000 PRELIMINARY FDS2570 150V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to.

FDS2572 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2572 October 2001 FDS2572 150V, 0.047 Ohms, 4.9A, N-Channel UltraFET® Trench MOSFET General Description ® UltraFET devices bine characteristic.

FDS2572 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, UltraFET TRENCH 150 V, 0.047 mW 4.9 A FDS2572 Description UltraFET Devices Combine Characteristics that enable benchmark efficienc.

FDS2582 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2582 September 2002 FDS2582 N-Channel PowerTrench® MOSFET 150V, 4.1A, 66mΩ Features • r DS(ON) = 57mΩ (Typ.), VGS = 10V, ID = 4.1A • Qg(tot) = 19.

FDS2582 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 150 V, 4.1 A, 66 mW FDS2582 Features • RDS(on) = 57 mW (Typ.), VGS = 10 V, ID = 4.1 A • Qg(TOT) = 19 nC (Typ.), VGS .

FDS2670 - N-Channel MOSFET (Fairchild Semiconductor)
FDS2670 August 2001 FDS2670 200V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve .

FDS2672 - N-Channel UltraFET (Fairchild Semiconductor)
.. FDS2672 N-Channel UltraFET Trench® MOSFET August 2006 FDS2672 N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ Features „ Max.