Datasheet Details
- Part number
- FDS2672
- Manufacturer
- ON Semiconductor ↗
- File Size
- 301.73 KB
- Datasheet
- FDS2672-ONSemiconductor.pdf
- Description
- N-Channel MOSFET
FDS2672 Description
MOSFET * N-Channel, UltraFET Trench 200 V, 3.9 A, 70 mW FDS2672 General .
This single N.
Channel MOSFET is produced using onsemi’s
advanced UItraFET Trench process that has been especially tailored to minimize the on.
FDS2672 Features
* Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A
* Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(on)
* These Device is Pb
* Free, Halide Free and are RoHS Compliant
Applicati
FDS2672 Applications
* DC
* DC Conversion
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID
Drain Current
* Continuous (Note 1a)
* Pulsed
200
V
±20
V
3.9
A
50
EAS Single Pulse Av
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