FDS2672 N-Channel MOSFET

ON Semiconductor

Description

MOSFET * N-Channel, UltraFET Trench 200 V, 3.9 A, 70 mW FDS2672 General .
This single N. Channel MOSFET is produced using onsemi’s advanced UItraFET Trench process that has been especially tailored to minimize the on.

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Datasheet Specifications

Part number: FDS2672
Manufacturer: ON Semiconductor ↗
File Size: 301.73 KB
Datasheet: FDS2672-ONSemiconductor.pdf
Description: N-Channel MOSFET

Features

* Max rDS(on) = 70 mW at VGS = 10 V, ID = 3.9 A
* Max rDS(on) = 80 mW at VGS = 6 V, ID = 3.5 A
* Fast Switching Speed
* High Performance Trench Technology for Extremely Low RDS(on)
* These Device is Pb
* Free, Halide Free and are RoHS Compliant Applicati

Applications

* DC
* DC Conversion ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter Value Unit VDS Drain to Source Voltage VGS Gate to Source Voltage ID Drain Current
* Continuous (Note 1a)
* Pulsed 200 V ±20 V 3.9 A 50 EAS Single Pulse Av

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FDS2672 N-Channel MOSFET ON Semiconductor

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