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FDS3672 - N-Channel MOSFET

FDS3672 Description

MOSFET * N-Channel, POWERTRENCH) 100 V, 7.5 A, 22 mW FDS3672 .

FDS3672 Features

* rDS(ON) = 19 mW (Typ. ), VGS = 10 V, ID = 7.5 A
* Qg(tot) = 28 nC (Typ. ), VGS = 10 V
* Low Miller Charge
* Low QRR Body Diode
* Optimized Efficiency at High Frequencies
* UIS Capability (Single Pulse and Repetitive Pulse)
* Pb
* Free and

FDS3672 Applications

* DC
* DC Converters and Off
* Line UPS
* Distributed Power Architecture and VRMs
* Primary Switch for 24 V and 48 V Systems
* High Voltage Synchronous Rectifier MOSFET MAXIMUM RATINGS (TA = 25°C unless otherwise noted. ) Symbol Parameter Ratings Unit

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N-Channel MOSFET ON Semiconductor
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