FDS3692 Datasheet, Mosfet, Fairchild Semiconductor

FDS3692 Features

• Mosfet
• rDS(ON) = 50mΩ (Typ.), VGS = 10V, ID = 4.5A
• Qg(tot) = 11nC (Typ.), VGS = 10V
• Low Miller Charge
• Low QRR Body Diode
• Optimized efficiency

PDF File Details

Part number:

FDS3692

Manufacturer:

Fairchild Semiconductor

File Size:

344.48kb

Download:

📄 Datasheet

Description:

N-channel mosfet.

FDS3692 Application

• Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V

TAGS

FDS3692

Fairchild Semiconductor

📁 Related Datasheet

FDS3690 - N-Channel MOSFET (Fairchild Semiconductor)
FDS3690 February 2000 PRELIMINARY FDS3690 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specificall.

FDS3601 - N-Channel MOSFET (Fairchild Semiconductor)
FDS3601 August 2001 FDS3601 100V Dual N-Channel PowerTrench MOSFET General Description These N-Channel MOSFETs have been designed specifically to i.

FDS3612 - N-Channel MOSFET (Fairchild Semiconductor)
FDS3612 March 2001 FDS3612 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve th.

FDS3670 - N-Channel MOSFET (Fairchild Semiconductor)
FDS3670 January 2000 PRELIMINARY FDS3670 100V N-Channel PowerTrench
MOSFET General Description This N-Channel MOSFET has been designed specifically.

FDS3672 - N-Channel MOSFET (Fairchild Semiconductor)
FDS3672 March 2003 FDS3672 N-Channel PowerTrench® MOSFET 100V, 7.5A, 22mΩ Features • r DS(ON) = 19mΩ (Typ.), VGS = 10V, ID = 7.5A • Qg(tot) = 28nC (.

FDS3672 - N-Channel MOSFET (ON Semiconductor)
MOSFET – N-Channel, POWERTRENCH) 100 V, 7.5 A, 22 mW FDS3672 Features • rDS(ON) = 19 mW (Typ.), VGS = 10 V, ID = 7.5 A • Qg(tot) = 28 nC (Typ.), VGS .

FDS3680 - N-Channel MOSFET (Fairchild Semiconductor)
FDS3680 January 2000 PRELIMINARY FDS3680 100V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically.

FDS3682 - N-Channel MOSFET (Fairchild Semiconductor)
FDS3682 September 2002 FDS3682 N-Channel PowerTrench® MOSFET 100V, 6A, 35mΩ Features • r DS(ON) = 30mΩ (Typ.), VGS = 10V, ID = 6A • Qg(tot) = 19nC (.

FDS3512 - N-Channel MOSFET (Fairchild Semiconductor)
FDS3512 May 2001 FDS3512 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the o.

FDS3512 - N-Channel MOSFET (ON Semiconductor)
FDS3512 FDS3512 80V N-Channel PowerTrench® MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall e.