HUF75321S3S, HUF75321P3 Datasheet - Fairchild Semiconductor

HUF75321S3S (HUF75321P3 / HUF75321S3S) N-Channel UltraFET Power MOSFETs

www.DataSheet4U.com HUF75321P3, HUF75321S3S Data Sheet December 2001 35A, 55V, 0.034 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was des.

HUF75321S3S Features

* 35A, 55V

* Simulation Models - Temperature Compensated PSPICE® and SABER™ Models - Thermal Impedance SPICE and SABER Models Available on the WEB at: www.fairchildsemi.com

* Peak Current vs Pulse Width Curve

* UIS Rating Curve

* Related Literature - TB334, “G

HUF75321P3_FairchildSemiconductor.pdf