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FDMS3615S - MOSFET

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FDMS3615S Product details

Description

Q1: N-Channel Max rDS(on) = 5.8 mΩ at VGS = 10 V, ID = 16 A Max rDS(on) = 8.3 mΩ at VGS = 4.5 V, ID = 13 A Q2: N-Channel Max rDS(on) = 3.4 mΩ at VGS = 10 V, ID = 18 A Max rDS(on) = 4.6 mΩ at VGS = 4.5 V, ID = 15 A Low inductance packaging shortens rise/fall times, resulting in lower switching losses MOSFET integration enables optimum layout for lower circuit inductance and reduced switch node ringing RoHS Compliant Pin 1 Thi

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