S4J Datasheet | Specifications & PDF Download

Silicon N-Channel Power MOSFET CS4J60F A9 General Description： CS4J60F A9, the silicon N-channel Enhanced MOSFETs, is obtained by the super junction

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Silicon N-Channel Power MOSFET CS4J60 A3-G General Description： CS4J60 A3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junctio

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Production specification Silicon Bridge Rectifiers FEATURES z Rating to 1000V PRV z Surge overload rating to 120 Amperes peak z Reliable low cost con

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Silicon N-Channel Power MOSFET CS4J60F A9-G General Description： CS4J60F A9-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junct

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SuperPlanarTM Bridge Rectifiers Production specification GBS4J--GBS4K Features  Planar passivated chips  Ultra low leakage reverse current  High

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*Ro*AH*HESACCL-OQOM2G0EP0NLICFAORNMETEP, L&IANT AUTOMOTIVE GRADE 116L3C07S0S41J%-4 26R Features n EB welded metal strip n Very high power n Excellen

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Silicon N-Channel Power MOSFET CS4J60 B3-G General Description： CS4J60 B3-G, the silicon N-channel Enhanced MOSFETs, is obtained by the super junctio

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S4A - S4M Taiwan Semiconductor 4A, 50V - 1000V Surface Mount Rectifier FEATURES ● Glass passivated chip junction ● Ideal for automated placement ● L

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