S6B Datasheet | Specifications & PDF Download

NVMFS6B05NL Power MOSFET 100 V, 5.6 mW, 114 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Cond

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NVMFS6B25NL Power MOSFET 100 V, 24 mW, 33 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduc

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204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb B-die HMT451S6BFR8A HMT41GS6BFR8A *SK hynix reserves the right to change produc

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NVMFS6B03NL Advance Information Power MOSFET 100 V, 4.8 mW, 145 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(

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NTMFS6B05N Power MOSFET 100 V, 8 mW, 104 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduct

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NVMFS6B75NL Power MOSFET 100 V, 30 mW, 28 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduc

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NVMFS6B85NL Power MOSFET 100 V, 46 mW, 19 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduc

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204pin DDR3L SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 4Gb B-die HMT451S6BFR8A HMT41GS6BFR8A *SK hynix reserves the right to change produc

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NTMFS6B14N Power MOSFET 100 V, 15 mW, 50 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduct

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NVMFS6B14NL Power MOSFET 100 V, 13 mW, 55 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduc

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NVMFS6B05N Power MOSFET 100 V, 8.0 mW, 114 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Condu

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DIP Type Rectifier Diodes TS6B01G ~ TS6B07G Diodes ■ Features ● Ideal for printed circuit board ● Reliable low cost construction ● Surge overload r

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NTMFS6B03N Power MOSFET 100 V, 4.8 mW, 132 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Condu

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HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply min. 27.5 Features • Low leakage, low zener impedance and maximum power

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www.DataSheet.co.kr 204pin DDR3 SDRAM SODIMM DDR3 SDRAM Unbuffered SODIMMs Based on 2Gb B-die HMT312S6BFR6C HMT325S6BFR6C HMT325S6BFR8C HMT351S6BFR8

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INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µ

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NVMFS6B03N Power MOSFET 100 V, 4.8 mW, 145 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Condu

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S6BT112A01/S6BT112A02 ASSP CXPI Transceiver IC for Automotive Network The S6BT112A01 and S6BT112A02 are integrated transceiver ICs for automotive com

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Pulse I/F (AC power input) The 5-Phase Stepping Driver PMAPA1S6B01 AC100V/115V Micro-step (500 x 1 to 40 divisions) Applicable motors ø60 ø86 ø106 Ch

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