MCC Features • • • • • .
International Rectifier
IRGS6B60KD - INSULATED GATE BIPOLAR TRANSISTOR
www.DataSheet4U.com PD - 94381E INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C IRGB6B60KD IRGS6B60KD IRGSL6B60KD VCES = 600.
Taiwan Semiconductor
TS6B06G - Glass Passivated Bridge Rectifiers
TS6B01G thru TS6B07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed ci.
Taiwan Semiconductor
TS6B05G - Glass Passivated Bridge Rectifiers
TS6B01G thru TS6B07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed ci.
Renesas
HZS6B1L - Silicon Planar Zener Diode
HZS-L Series Silicon Planar Zener Diode for Low Noise Application REJ03G0166-0300 Rev.3.00 Nov 06, 2007 Features • Diode noise level of this series.
Taiwan Semiconductor
TS6B01G - Glass Passivated Bridge Rectifiers
TS6B01G thru TS6B07G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Glass passivated junction - Ideal for printed ci.
SEMTECH
HZS6B1 - SILICON EPITAXIAL PLANER ZENER DIODES
HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply min. 27.5 Features • Low leakage, low zener impedance and maximum power.
International Rectifier
IRGS6B60KDPBF - Insulated Gate Bipolar Transistor
PD - 95229C INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE C Features • Low VCE (on) Non Punch Through IGBT Technology. • Low.
Cypress Semiconductor
S6BT112A02 - ASSP CXPI Transceiver
S6BT112A01/S6BT112A02 ASSP CXPI Transceiver IC for Automotive Network The S6BT112A01 and S6BT112A02 are integrated transceiver ICs for automotive com.
GME
GBS6B - Silicon Bridge Rectifiers
Production specification Silicon Bridge Rectifiers GBS6A--GBS6M FEATURES z Rating to 1000V PRV z Surge overload rating to 140 Amperes peak Pb Lea.
SEMTECH
HZS6B3 - SILICON EPITAXIAL PLANER ZENER DIODES
HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply min. 27.5 Features • Low leakage, low zener impedance and maximum power.
SEMTECH
HZS6B2 - SILICON EPITAXIAL PLANER ZENER DIODES
HZS Series SILICON EPITAXIAL PLANER ZENER DIODES for Stabilized Power Supply min. 27.5 Features • Low leakage, low zener impedance and maximum power.
Samsung semiconductor
S6B0107 - 64 CH SEGMENT DRIVER FOR DOT MATRIX LCD
S6B0107 64CH COMMON DRIVER FOR DOT MATRIX LCD July 2001 Ver. 0.0 Contents in this document are subject to change without notice. No part of this docum.
Hynix Semiconductor
HMT325S6BFR8A - 204pin DDR3 SDRAM SODIMM
204pin DDR3 SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb B-die HMT325S6BFR8A HMT351S6BFR8A *Hynix Semiconductor reserves the right to ch.
Hynix Semiconductor
HMT351S6BFR8A - 204pin DDR3 SDRAM SODIMM
204pin DDR3 SDRAM SODIMM DDR3L SDRAM Unbuffered SODIMMs Based on 2Gb B-die HMT325S6BFR8A HMT351S6BFR8A *Hynix Semiconductor reserves the right to ch.
International Rectifier
S6B60KD - IRGS6B60KD
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • Low VCE (on) Non Punch Through IGBT Technology. • Low Diode VF. • 10µ.
ON Semiconductor
NVMFS6B03N - Power MOSFET
NVMFS6B03N Power MOSFET 100 V, 4.8 mW, 145 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Condu.
ON Semiconductor
NVMFS6B14NL - Power MOSFET
NVMFS6B14NL Power MOSFET 100 V, 13 mW, 55 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduc.
ON Semiconductor
NVMFS6B05N - Power MOSFET
NVMFS6B05N Power MOSFET 100 V, 8.0 mW, 114 A, Single N−Channel Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Condu.
KEXIN
TS6B01G - Rectifier Diodes
DIP Type Rectifier Diodes TS6B01G ~ TS6B07G Diodes ■ Features ● Ideal for printed circuit board ● Reliable low cost construction ● Surge overload r.
KEXIN
TS6B02G - Rectifier Diodes
DIP Type Rectifier Diodes TS6B01G ~ TS6B07G Diodes ■ Features ● Ideal for printed circuit board ● Reliable low cost construction ● Surge overload r.
