S8J Datasheet | Specifications & PDF Download

Certificate TH97/10561QM Certificate TW00/17276EM NS8AT - NS8MT PRV : 50 - 1000 Volts Io : 8.0 Ampere FEATURES : * High current capability * High su

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www.vishay.com NS8xT, NSF8xT, NSB8xT Vishay General Semiconductor Glass Passivated General Purpose Plastic Rectifier TO-220AC ITO-220AC NS8xT PIN

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NS8AT THRU NS8MT GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts TO-220AC 0.185 (4.70) 0.415 (10.54) MAX. 0.370

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S8A S8M S8A S8M Standard Recovery SMD Rectifier Diodes SMD-Gleichrichterdioden mit Standard-Sperrverzug Version 2023-08-18 SMC ~ DO-214AB

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www.vishay.com FES8xT, FESF8xT, FESB8xT Vishay General Semiconductor Ultrafast Plastic Rectifier TO-220AC ITO-220AC FES8xT PIN 1 PIN 2 2 1 CASE

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ES8A thru ES8J ® Features Glass passivated junction chip For surface mounted application Low profile package Built-in strain relief Ideal for automat

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S8GC – S8MC Taiwan Semiconductor 8A, 400V - 1000V Surface Mount Rectifier FEATURES ● Low forward voltage drop ● Ideal for automated placement ● High

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www.vishay.com S8G, S8J, S8K, S8M Vishay General Semiconductor Surface-Mount Glass Passivated Rectifier SMC (DO-214AB) Cathode Anode FEATURES •

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GS8A THRU GS8M Surface Mount General Purpose Rectifier RoHS COMPLIANT Features ● Low profile package ● Ideal for automated placement ● Glass passiva

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MCC Features • • • • •
     omponents 21201 Itasca Street Chatsworth  # $ % # S8A THRU S

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SENSITRON

T-G  T-G
SEMICONDUCTOR    4827  -
         
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FES8AT THRU FES8JT FAST EFFICIENT PLASTIC RECTIFIER Reverse Voltage - 50 to 600 Volts TO-220AC 0.185 (4.70) 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.1

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SURFACE MOUNT GLASS PASSIVATED RECTIFIERS S8GC thru S8MC REVERSE VOLTAGE –400 to 1000 Volts FORWARD CURRENT – 8.0 Amperes FEATURES • Glass passivate

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8A Fast Efficient Rectifiers FES8AT – FES8JT 8A Fast Efficient Rectifiers Features • Glass passivated chip junction • Super fast recovery times, high

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FES8AT - FES8JT PRV : 50 - 600 Volts Io : 8 Ampere FEATURES : * High current capability * High surge current capability * Low leakage, high voltage *

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www.DataSheet4U.com 4V Drive Pch + Pch MOSFET QS8J4  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) TSMT8 (8) (7) (6) (5) Features 1)

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www.DataSheet4U.com 4V Drive Pch + Pch MOSFET QS8J5  Structure Silicon P-channel MOSFET  Dimensions (Unit : mm) TSMT8 (8) (7) (6) (5) Features 1)

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QS8J2 　　-12V Pch + Pch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -12V 36mΩ ±4A 1.5W lFeatures 1) Low on - resistance. 2) -1.5V Drive. 3) Built-i

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www.DataSheet4U.com QS8J1 Transistors 1.5V Drive Pch+Pch MOSFET QS8J1 zStructure Silicon P-channel MOSFET zDimensions (Unit : mm) TSMT8 (8) (7) (6)

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NotNeRewcDoemsimgennsded for QS8J11 　　-12V Pch +Pch Middle Power MOSFET VDSS RDS(on)(Max.) ID PD -12V 43mΩ ±3.5A 1.5W lFeatures 1) Low on - resist

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