SA1 Datasheet | Specifications & PDF Download

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SA1 SURFACE MOUNT SILICON RECTIFIER

SURFACE MOUNT SILICON RECTIFIER VOLTAGE RANGE 50 t.

Toshiba Semiconductor

A1013 - 2SA1013

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1013 Color TV Verttical Deflection Output Applications Power Switching Applications 2S.
Rating: 5 ★★★★★ (228 votes)
Motorola Inc

SA18A - MOSORB ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Zener Transient Voltage Suppressors Unidirectional and Bidirectional The SA5.0A series is designed to protect .
Rating: 4 ★★★★ (186 votes)
Toshiba Semiconductor

A1837 - 2SA1837

TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1837 Power Amplifier Applications Driver Stage Amplifier Applications 2SA1837 Unit: mm • High trans.
Rating: 4 ★★★★ (181 votes)
SavantIC

A1941 - 2SA1941

SavantIC Semiconductor Silicon PNP Power Transistors Product Specification 2SA1941 DESCRIPTION ·With TO-3P(I) package ·Complement to type 2SC5198 A.
Rating: 4 ★★★★ (158 votes)
Inchange Semiconductor

2SA1943 - POWER TRANSISTOR

isc Silicon PNP Power Transistor DESCRIPTION ·High Current Capability ·High Power Dissipation ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO=-.
Rating: 2 ★★ (98 votes)
Inchange Semiconductor Company Limited

2SA1216 - Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SA1216 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- V(BR)CEO= -180V(Min) ·Good Li.
Rating: 2 ★★ (85 votes)
Inchange Semiconductor

2SA1695 - POWER TRANSISTOR

INCHANGE Semiconductor Product Specification Silicon PNP Power Transistor 2SA1695 DESCRIPTION ·High Collector-Emitter Breakdown VoltageV(BR)CEO= -.
Rating: 2 ★★ (75 votes)
Toshiba

2SA1302 - Silicon PNP Transistor

TOSHIBA Discrete Semiconductors Transistor Silicon PNP Epitaxial Type (PCT Process) For General Purpose Switching and Amplifier Applications Featur.
Rating: 2 ★★ (67 votes)
ETC

2SA102 - Ge PNP Drift Transistor

www.DataSheet4U.com www.DataSheet4U.com .
Rating: 2 ★★ (65 votes)
SEMTECH ELECTRONICS

2SA1268 - PNP Silicon Transistor

ST 2SA1268 PNP Silicon Epitaxial Planar Transistor For high voltage applications. The transistor is subdivided into two groups, G and L according to i.
Rating: 2 ★★ (57 votes)
Fairchild Semiconductor

A1962 - 2SA1962

2SA1962/FJA4213 — PNP Epitaxial Silicon Transistor March 2008 2SA1962/FJA4213 PNP Epitaxial Silicon Transistor Applications • High-Fidelity Audio Ou.
Rating: 2 ★★ (56 votes)
SavantIC

A1006 - 2SA1006

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1006 2SA1006A 2SA1006B · DESCRIPTION ·With TO-2.
Rating: 2 ★★ (56 votes)
SavantIC

2SA1492 - SILICON POWER TRANSISTOR

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1492 DESCRIPTION ·With TO-3PN package ·Complemen.
Rating: 2 ★★ (55 votes)
Toshiba Semiconductor

A1930 - 2SA1930

2SA1930 TOSHIBA Transistor Silicon PNP Epitaxial Type 2SA1930 Power Amplifier Applications Driver Stage Amplifier Applications Unit: mm • • High tr.
Rating: 2 ★★ (54 votes)
SavantIC

A1668 - 2SA1668

SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1667 2SA1668 DESCRIPTION ·With TO-220F package ·.
Rating: 1 (50 votes)
Toshiba Semiconductor

2SA1943 - Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications 2SA1943 Unit: mm • High collector voltage: VCEO = −230 V (m.
Rating: 1 (47 votes)
Rohm

2SA1038 - Epitaxial Planae PNP Transistor

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Rating: 1 (46 votes)
Toshiba Semiconductor

2SA1020 - PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Power Switching Applications • Low Collector saturati.
Rating: 1 (45 votes)
Bluecolour

A1024 - 2SA1024

2SA1024 PNP Silicon Epitaxial Planar Transistor for high voltage applications. The transistor is subdivided into two groups, O and Y according to it.
Rating: 1 (45 votes)
Inchange Semiconductor

2SA1011 - POWER TRANSISTOR

sc Silicon PNP Power Transistor 2SA1011 DESCRIPTION ·Low Collector Saturation Voltage- : VCE(sat)= -0.5V(Typ.)@ IC= -0.5A ·Collector-Emitter Breakdo.
Rating: 1 (43 votes)
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