SA110 Datasheet | Specifications & PDF Download

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1106 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -140V(Min) ·Good Linear

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Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1104 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth:

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Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-1105 Features • High Dynamic Range Cascadable 50 Ω or 75 Ω Gain Block • 3 dB Bandwidth:

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DSA1101/21/05/25 Low-Jitter Precision CMOS Oscillator for Automotive Features • Automotive AEC-Q100 Qualified • Two Rise/Fall Time Options for EMI Re

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1105 DESCRIPTION ·With TO-3PN package ·High freq

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isc Silicon PNP Power Transistor 2SA1102 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -80V(Min) ·Good Linearity of hFE ·Minimum Lot-t

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1102 DESCRIPTION ·With TO-3PN package ·Complemen

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1104 DESCRIPTION ·With TO-3PN package ·High freq

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Click to see this datasheet in Simplified Chinese FSA110 — Audio and Wired-OR USB2.0 Hi-Speed Switch with Negative Signal Capability and Built-in Te

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isc Silicon PNP Power Transistor 2SA1109 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -180V(Min.) ·High Power Dissipation ·Minimum

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isc Silicon PNP Power Transistor 2SA1107 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -150V(Min) ·Good Linearity of hFE ·High Power D

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1103 DESCRIPTION ·With TO-3PN package ·Complemen

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1108 DESCRIPTION ·With MT-200 package ·High powe

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SA1106 DESCRIPTION ·With TO-3PN package ·High freq

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BL GALAXY ELECTRICAL TRANSIENT VOLTAGE SUPPRESSOR FEATURES Plastic package gas Underwriters Laboratory Flammability Classification 94V-0 Glass passiva

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isc Silicon PNP Power Transistor 2SA1105 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·High Power D

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AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS SA5.0 - SA440CA DIMENSION DO-15 Dim Millimeters Inches Min Max Min Max A 25.4 --- 1.000 --- B 5.80 7.60

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SA5.0 THRU SA170CA TRANSZORB™ TRANSIENT VOLTAGE SUPPRESSOR Stand-off Voltage - 5.0 to 170 Volts DO-204AC Peak Pulse Power - 500 Watts FEATURES 0.034

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isc Silicon PNP Power Transistor 2SA1104 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min) ·Good Linearity of hFE ·High Power D

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isc Silicon PNP Power Transistor 2SA1103 DESCRIPTION ·Collector-Emitter Breakdown Voltage- V(BR)CEO= -100V(Min) ·Good Linearity of hFE ·Minimum Lot-

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