AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS SA5.0 - S.
Sanyo Semicon Device
A1207 - 2SA1207
www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Ap.
Sanyo Semicon Device
A1208 - 2SA1208
Ordering number:EN781F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications F.
Fuji Electric
7MBR10SA120 - IGBT
7MBR10SA120 IGBT MODULE (S series) 1200V / 10A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri.
Sanyo Semicon Device
A1209 - 2SA1209
Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applicat.
Fuji Electric
7MBR15SA120 - IGBT
7MBR15SA120 IGBT MODULE (S series) 1200V / 15A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri.
Mitsubishi Electric Semiconductor
PM75DSA120 - Intelligent Power Module
MITSUBISHI INTELLIGENT POWER MODULES PM75DSA120 FLAT-BASE TYPE INSULATED PACKAGE A B G L C2E1 E2 C1 G G M U N 123 45 T - DIA. (4 TYP.) C 1234 5 .
Jin Yu Semiconductor
2SA1201 - TRANSISTOR
2SA1 201 TRANSISTOR(PNP) FEATURES z High voltage z High transition frequency z Complementary to 2SC2881 MAXIMUM RATINGS (TA=25℃ unless otherwise note.
XP Power
ISA1209 - DC-DC Converter
ISA Series 1 Watt xxx • Dual Output Series • SMD Package • Industry Standard Pinout • Operating Temperature -40 °C to +105 °C • 1500 VDC Isolation, 30.
Fuji Electric
7MBR25SA120 - IGBT
7MBR25SA120 IGBT MODULE (S series) 1200V / 25A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri.
UTC
2SA1201 - SILICON PNP EPITAXIAL TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power.
XP Power
ISA1205 - DC-DC Converter
ISA Series 1 Watt xxx • Dual Output Series • SMD Package • Industry Standard Pinout • Operating Temperature -40 °C to +105 °C • 1500 VDC Isolation, 30.
BLUE ROCKET ELECTRONICS
2SA1201G - Silicon PNP transistor
2SA1201G Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-89 PNP 。Silicon PNP transistor in a SOT-89 Plastic Package. / Features ，,, 2SC2881G 。。.
Toshiba Semiconductor
2SA1200 - SILICON PNP TRIPLE DIFFUSED TRANSISTOR
TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 2SA1200 High Voltage Switching Applications · High voltage: VCEO = −150 V.
SavantIC
2SA1209 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-126 package ·Complement to type .
Inchange Semiconductor
2SA1205 - POWER TRANSISTOR
isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -50V(Min) ·Low Collector Saturation Voltage- : VCE(sat.
Kexin
2SA1201 - Transistors
SMD Type Voltage Amplifier Applications 2SA1201 Transistors Features High Voltage : VCEO = -120V High Transition Frequency : fT = 120MHz(typ.) Small.
Fairchild Semiconductor
SA120CA - Transient Voltage Supressors
SA5.0(C)A - SA170(C)A SA5.0(C)A - SA170(C)A Features • Glass passivated junction. • 500W Peak Pulse Power capability on 10/1000 µs waveform. • Excel.
BLUE ROCKET ELECTRONICS
2SA1208 - Silicon PNP transistor
2SA1208 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP 。Silicon PNP transistor in a TO-92LM Plastic Package. / Features ，hFE Cob ，， 2SC.
Toshiba Semiconductor
2SA1202 - Silicon PNP Transistor
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Voltage Amplifier Applications 2SA1202 Unit: mm • S.
IXYS
W0735SA120 - Rectifier Diode
Date:- 20th August, 2014 Data Sheet Issue:- 2 Rectifier Diode Types W0735R/SA120 to W0735R/SA150 Previous Type No.: SW02-15PHN/R470 Absolute Maximum .