SA120 Datasheet | Specifications & PDF Download

www.DataSheet.co.kr Ordering number:ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Ap

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Ordering number:EN781F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications F

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Power Amplifier Applications 2SA1201 Unit: mm • H

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Voltage Amplifier Applications 2SA1202 Unit: mm • S

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UNISONIC TECHNOLOGIES CO., LTD 2SA1201 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR „ DESCRIPTION The UTC 2SA1201 is designed for power

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DSA12X1 High Performance CMOS MEMS Oscillator for Automotive Features • Automotive AEC-Q100 Qualified • Wide Frequency Range: 2.5 MHz to 170 MHz • Ve

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Surface Mount Filter Arrays SA Series FeaturesDimensions Insertion Loss Equivalent Circuit s The filter’s structure minimizes residual inductance w

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PM75CSA120 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Intellimod™ Module Three Phase IGBT Inverter Output 75

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MITSUBISHI INTELLIGENT POWER MODULES PM600HSA120 FLAT-BASE TYPE INSULATED PACKAGE A B E E F S E W 1. 2. 3. 4. 5. V1 SR C1 VC FO H C H K 123 45

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isc Silicon PNP Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -160V(Min) ·Good Linearity of hFE ·High Switching Spee

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SA5.0 – SA170CA Available 5.0 to 170 Volts, 500 Watts Transient Voltage Suppressors DESCRIPTION This Transient Voltage Suppressor is a high value c

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7MBR25SA120 IGBT MODULE (S series) 1200V / 25A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri

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KSA1201 KSA1201 Power Amplifier • • • • Collector-Emitter Voltage: VCEO= -120V fT=120MHz Collector Power Dissipation PC=1~2W : Mounted on Ceramic Boa

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MITSUBISHI INTELLIGENT POWER MODULES PM75CSA120 FLAT-BASE TYPE INSULATED PACKAGE A B R AD 12 3 4 W Q AB U Y (4 TYP.) U U AB 5678 9 11 13 15 17 19

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Ordering number:ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applicat

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7MBR10SA120 IGBT MODULE (S series) 1200V / 10A / PIM IGBT Modules Features · Low VCE(sat) · Compact package · P.C. board mount · Converter diode bri

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MCC TM Micro Commercial Components
     omponents 20736 Marilla Street Chatsworth  # $ % #

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SMD Type High Voltage Switching Applications 2SA1200 Transistors Features High Voltage : VCEO = -150V High Transition Frequency : fT = 120MHz(typ.)

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AXIAL LEAD TRANSIENT VOLTAGE SUPPRESSORS SA5.0 - SA440CA DIMENSION DO-15 Dim Millimeters Inches Min Max Min Max A 25.4 --- 1.000 --- B 5.80 7.60

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Transient Voltage Suppression (TVS) Diodes SA5.0 – SA170A Series Invisible Protection When no problems exist, Crydom TVS Diodes are totally invisible

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