LM351A (Samsung)
3535 Middle Power LED
ISSUE NO :
Rev: 000
Product Family Data Sheet
LM351A - 3535 Middle Power LED
Introduction
Features
Beam Angle : 120˚ Precondition : JEDEC Level
(98 views)
K4H643238D-TCA2 (Samsung)
128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
(3 views)
K4H643238D-TLA2 (Samsung)
128Mb DDR SDRAM
128Mb DDR SDRAM
DDR SDRAM Specification Version 1.0
- 1 -
REV. 1.0 November. 2. 2000
128Mb DDR SDRAM
Revision History
Version 0 (May, 1998) - Firs
(3 views)
Free Datasheet http://www.datasheet4u.com/
Free Datasheet http://www.datasheet4u.com/
Free Datasheet http://www.datasheet4u.com/
Free Datasheet htt
(3 views)
LH351B (Samsung)
3535 Ceramic LED
Product Family Data Sheet Rev.25.2 2019.0311
High Power LED Series 3535 Ceramic Hot Binning
LH351B
1#
High efficacy and high quality color rendering
(2 views)
INR18650-35E (Samsung)
Lithium-ion rechargeable cell
Spec. No.
SAMSUNG SDI Confidential Proprietary
INR18650-35E Version No. Ver. 1.1
SPECIFICATION OF PRODUCT
for Lithium-ion rechargeable cell Model na
(2 views)
CL21B106KOQNNNE (Samsung)
Multi Layer Ceramic Capacitor
SPECIFICATION (Reference sheet)
· Supplier : Samsung electro-mechanics · Product : Multi-layer Ceramic Capacitor
· Samsung P/N : · Description :
CL
(2 views)
SSP60N06 (Samsung)
N-CHANNEL POWER MOSFETS
(2 views)
IRFU320A (Samsung)
Power MOSFET
)($785(6
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(2 views)
K4E151611C (Samsung)
1M x 16Bit CMOS Dynamic RAM
K4E171611C, K4E151611C K4E171612C, K4E151612C
CMOS DRAM
1M x 16Bit CMOS Dynamic RAM with Extended Data Out
DESCRIPTION
This is a family of 1,048,57
(2 views)
KM48L16031BT (Samsung semiconductor)
128Mb DDR SDRAM
128Mb DDR SDRAM
Target
DDR SDRAM Specification Version 0.61
- 1 of 63 -
REV. 0.61 August 9. '99
128Mb DDR SDRAM
Target
Revision History
Versio
(2 views)
KM416RD8AC (Samsung semiconductor)
128/144Mbit RDRAM
KM416RD8AC(D)/KM418RD8AC(D)
Direct RDRAM™
128/144Mbit RDRAM
256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM
Revision 1.01 October 1999
Page
(2 views)
KM44C4103C (Samsung semiconductor)
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
KM44C4003C, KM44C4103C
CMOS DRAM
4M x 4Bit CMOS Quad CAS DRAM with Fast Page Mode
DESCRIPTION
This is a family of 4,194,304 x 4 bit Quad CAS with Fa
(2 views)
KSD1616 (Samsung semiconductor)
NPN (AUDIO FREQUENCY POWER AMPLIFIER MIDIUM SPEED SWITCHING)
(2 views)
KSP06 (Samsung semiconductor)
NPN EPITAXIAL SILICON TRANSISTOR
(2 views)
KSR1109 (Samsung semiconductor)
NPN (SWITCHING APPLICATION)
(2 views)
KSR1209 (Samsung semiconductor)
NPN Epitaxial Silicon Transistor
(2 views)
KT8555J (Samsung semiconductor)
TIME SLOT ASSIGNMENT CIRCUIT
KT8555
TIME SLOT ASSIGNMENT CIRCUIT
INTRODUCTION
20-CERDIP The KT8555 is a per channel Time Slot Assignment Circuit (TSAC) that produces 8-bit recei
(2 views)
S3C80A8 (Samsung semiconductor)
S3C8-series of 8-bit single-chip CMOS microcontrollers offers a fast and efficient CPU
S3C80A4/C80A8/C80A5/C80B4/C80B8/C80B5
PRODUCT OVERVIEW
1
OVERVIEW
PRODUCT OVERVIEW
Samsung's S3C8-series of 8-bit single-chip CMOS microcontroller
(2 views)
S3C8249 (Samsung semiconductor)
S3C8-SERIES MICROCONTROLLERS
S3C8248/C8245/P8245/C8247/C8249/P8249
PRODUCT OVERVIEW
1
PRODUCT OVERVIEW
S3C8-SERIES MICROCONTROLLERS
Samsung's S3C8 series of 8-bit single-chip
(2 views)