SB1100 Datasheet | Specifications & PDF Download

SB120 thru SB1100 Schottky Barrier Rectifiers Reverse Voltage 20 to 100V Forward Current 1.0A Feature & Dimensions Flammability Classification 94V-0 *

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SB120 THRU SB1100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere DO-204AL 0.107(2.70) 0.080(2.00) DIA.

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SB 120 SB 1100 Axial lead diode Schottky barrier rectifiers diodes SB 120 SB 1100 Forward Current: 1 A Reverse Voltage: 20 to 100 V Features 

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DATA SHEET SB120~SB1100 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE 50 to 100 Volts FEATURES 1.0 ( 25.4 ) MIN. CURRENT - 1.0 Ampere DO-41 Unit: in

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SB170 - SB1100 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient P

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 30A Peak  Low Power L

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SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operation at TA = 75°C with no thermal runaway. For use in low voltage, high frequency inverters

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ELECTRONIC SB140 ~ SB1200 Power Schottky Rectifier - 1Amp 40~200Volt □ Features -Low forward voltage drop -High current capability -High reliabilit

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SANGDEST MICROELECTRONICS Technical Data Data Sheet N0873, Rev. - Applications: SB1100 SCHOTTKY RECTIFIER z Switching power supply z Converters z

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BLGALAXY ELECTRICAL SB120S- - - SB1100S SCHOTTKY BARRIER RECTIFIERS FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low

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62 +0.5.5 -2.5 SB120S SB1100S Version 2014-08-20 Ø 2.6-0.1 Ø 0.77±0.07 Dimensions - Maße [mm] Type 5.1-0.1 SB120S SB1100S Schottky Barrier

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SB120S~SB1100S SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammab

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Leaded Schottky Barrier Rectifiers SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features -Low drop down voltage. -Metal-Semi

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SB120 THRU SB1100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage – 20 to 100 Volts Forward Current – 1.0 Amperes Features • High current capability • High

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isc Silicon PNP Darlington Power Transistor 2SB1100 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -100V(Min) ·High DC Current Gain-

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