SB130 Datasheet | Specifications & PDF Download

Kinetix Rotary Motion Specifications Kinetix 6000M Integrated Drive-Motor Systems The Kinetix 6000M integrated drive-motor system combines the reliabl

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Transistors 2SB1308 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in an

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KSX13005A Series KSB13005A/KSG13005A/KSU13005A KSD13005A/KSH13005A/KSH13005AF NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 4A General D

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KSX13003C Series KSB13003C KSU13003C NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A General Description • High voltage, High speed p

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KSX13003H Series KSB13003H KSC13003H / KSU13003H NPN Silicon Power Transistor, VCBO= 900V, VCEO= 530V, IC= 1.5A General Description • High voltage,

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www.vishay.com SB110, SB120, SB130, SB140, SB150, SB160 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY C

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Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-b

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KSX13003A Series KSB13003A / KSG13003A KSC13003A / KSH13003A NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A General Description • Hi

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KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A General Description • High Voltage,

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SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1302 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation

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MCC Micro Commercial Components TM
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SMD Type PNP Transistors 2SB1308-HF Transistors ■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltag

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Features • Metal-Semiconductor junction with guardring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic mat

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Ordering number : EN2555B 2SB1302 SANYO Semiconductors DATA SHEET 2SB1302 PNP Epitaxial Planar Silicon Transistor High-Current Switching Application

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Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER RECTIFIERS SB120 - SB1A0 DO-41P Axial Lea

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SB120 - SB1B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capab

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DATA SHEET www.onsemi.com Bipolar Transistor –20 V, –5 A, Low VCE(sat), PNP Single PCP 2SB1302 Features • Adoption of FBET, MBIT Processes • Large C

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Features xxxx Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capabilit

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