SB130 Datasheet | Specifications & PDF Download

SMD Type Power Transistor 2SB1308 Transistors Features Low saturation voltage, typically VCE(sat) = -0.45V (Max.) at IC/IB = -1.5A / -0.15A. Excelle

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Transistors 2SB1308 2SD1963 (94S-166-B204) (94S-342-D204) 290 Appendix Notes No technical content pages of this document may be reproduced in an

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SMD Type PNP Transistors 2SB1308-HF Transistors ■ Features ● Power Transistor ● Excellent DC current Gain ● Low Collector-emitter Saturation Voltag

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SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low

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Features • Metal-Semiconductor junction with guardring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic mat

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SB120S THRU SB1B0S SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere Features Plastic package has Underwriter

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KSX13003E Series KSB13003E KSU13003E / KSD13003E NPN Silicon Power Transistor, VCBO= 700V, VCEO= 400V, IC= 1.5A General Description • High Voltage,

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SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operation at TA = 75°C with no thermal runaway. For use in low voltage, high frequency inverters

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SMD Type Transistors PNP Epitaxial Planar Silicon Transistors 2SB1302 Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation

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Transys Electronics L I M I T E D SOT-89 Plastic-Encapsulated Transistors 2SB1308 FEATURES Power dissipation PCM: Collector current ICM: Collector-b

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® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 30A Peak  Low Power L

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DATA SHEET www.onsemi.com Bipolar Transistor –20 V, –5 A, Low VCE(sat), PNP Single PCP 2SB1302 Features • Adoption of FBET, MBIT Processes • Large C

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Kinetix Rotary Motion Specifications Kinetix 6000M Integrated Drive-Motor Systems The Kinetix 6000M integrated drive-motor system combines the reliabl

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SB120 THRU SB1100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage – 20 to 100 Volts Forward Current – 1.0 Amperes Features • High current capability • High

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Power Transistor(-50V,-3A) FEATURES  Low saturation voltage,typically VCE(sat)=-0.45(Max) at IC/IB=-1.5A/-0.15A Pb Lead-free  Excellent DC curren

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WILLAS SOT-89 Plastic-Encapsulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE FM120-M+ 2SB1308 THRU FM1200

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KSX13003C Series KSB13003C KSU13003C NPN Silicon Power Transistor, VCBO= 800V, VCEO= 450V, IC= 1.5A General Description • High voltage, High speed p

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www.vishay.com SB110, SB120, SB130, SB140, SB150, SB160 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY C

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SB120 - SB1B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capab

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