SB140-G Datasheet | Specifications & PDF Download

Ordering number:EN3470 PNP Epitaxial Planar Silicon Darlington Transistor 2SB1406 Driver Applications Applications · Relay drivers, hammer drivers,

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isc Silicon PNP Darlington Power Transistor 2SB1402 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain-

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2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 12

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SB120 THRU SB160 Technical Data Data Sheet N0869, Rev. C SB120 THRU SB160 SCHOTTKY RECTIFIER Features DO-41  Schottky Barrier Chip  Guard Ring Di

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isc Silicon PNP Darlington Power Transistor DESCRIPTION ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -120V(Min) ·High DC Current Gain- : hFE=

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2SB1400 Silicon PNP Epitaxial Application Low frequency power amplifier Outline TO-220FM 2 1 1. Base 2. Collector 3. Emitter 12 3 1 kΩ (Typ) 40

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2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 12

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2SB1409(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2123(L)/(S) Outline DPAK 4 4 1 2 3 12

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SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1404 DESCRIPTION ·With TO-220Fa package ·High DC

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7MBR35SB140 IGBT MODULE (S series) 1400V / 35A / PIM IGBT Modules Features · Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Di

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DATA SHEET SB120~SB1100 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE 50 to 100 Volts FEATURES 1.0 ( 25.4 ) MIN. CURRENT - 1.0 Ampere DO-41 Unit: in

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SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low

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SB120S THRU SB1B0S SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 1.0 Ampere Features Plastic package has Underwriter

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www.vishay.com SB110, SB120, SB130, SB140, SB150, SB160 Vishay General Semiconductor Schottky Barrier Plastic Rectifier DO-41 (DO-204AL) PRIMARY C

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SB120-SB1100 SB120 - SB1100 Features • • 1.0 ampere operation at TA = 75°C with no thermal runaway. For use in low voltage, high frequency inverters

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Leaded Schottky Barrier Rectifiers SB120-G Thru. SB1100-G Voltage: 20 to 100 V Current: 1.0 A RoHS Device Features -Low drop down voltage. -Metal-Semi

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isc Silicon PNP Darlington Power Transistor 2SB1404 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -120V(Min) ·High DC Current Gain-

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www.DataSheet4U.com

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2SB1407(L)/(S) Silicon PNP Epitaxial Application Low frequency power amplifier complementary Pair with 2SD2121(L)/(S) Outline DPAK 4 4 1 2 3 12

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