SB160 Datasheet | Specifications & PDF Download

SB120 - SB1B0 SCHOTTKY BARRIER RECTIFIER DIODES PRV : 20 - 100 Volts IO : 1.0 Ampere FEATURES : * High current capability * High surge current capab

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Features xxxx Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop,low switching losses High surge capabilit

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Ordering number :EN2500 SB160-09R Schottky Barrier Diode (Twin Type · Cathode Common) 90V, 16A Rectifier Applications · High frequency rectification

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DATA SHEET SB120~SB1100 1 AMPERE SCHOTTKY BARRIER RECTIFIERS VOLTAGE 50 to 100 Volts FEATURES 1.0 ( 25.4 ) MIN. CURRENT - 1.0 Ampere DO-41 Unit: in

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Ordering number :EN2581A SB160-18 Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 16A Rectifier Applications · High frequency rectificatio

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STUSB1600 USB Type-CTM controller with high voltage protection Datasheet - production data • Temperature range: -40 °C up to 105 °C Features • Typ

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Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features

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Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features

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Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 4.6±0.2 φ3.2±0.1 9.9±0.3

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Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 4.6±0.2 φ3.2±0.1 9.9±0.3

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Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q q q Unit: mm 4.6±0.2 φ3.2±

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Power Transistors 2SB1605, 2SB1605A Silicon PNP epitaxial planar type For low-freauency power amplification s Features q q q Unit: mm 4.6±0.2 φ3.2±

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Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1

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Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 s Features q q q q φ3.2±0

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SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low

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Features • Metal-Semiconductor junction with guardring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic mat

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Ordering number :EN1982A SB160-05H Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 16A Rectifier Applications · High frequency rectificatio

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Ordering number :EN2504 SB160-05R Schottky Barrier Diode (Twin Type · Cathode Common) 50V, 16A Rectifier Applications · High frequency rectification

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Ordering number :EN2688 SB160-09 Schottky Barrier Diode (Twin Type · Cathode Common) 90V, 16A Rectifier Applications · High frequency rectification

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