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2SB1605 Datasheet PNP Transistor

Manufacturer: Inchange Semiconductor

Overview: isc Silicon PNP Power Transistor.

General Description

·High-speed Switching ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -1.2V(Max.)@IC= -3A ·Full-pack Package With Outstanding Insulation, Which Can Be Installed to The Heat Sink With One Screw ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for low-freauency power switching and general purpose applications.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 2 W 35 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1605 isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1605 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP.

MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC = –30mA, IB = 0 -60 V VCE(sat) Collector-Emitter Saturation Voltage IC= -3A;

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