2SB1605 Datasheet | SavantIC

DESCRIPTION - With TO-220F package - Low collector saturation voltage - Good linearity of h FE APPLICATIONS - For low-voltage switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER 2SB1605 VCBO Collector-base voltage 2SB1605A 2SB1605 VCEO Collector-emitter voltage 2SB1605A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25 PC Collector dissipation TC=25 Tj Tstg Junction temperature Storage temperature 35 150 -55~150 Open collector Open base -80 -5 -3 -5 2 W V A A Open emitter -80 -60 V CONDITIONS MAX -60 V UNIT Savant IC Semiconductor .. Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER 2SB1605 IC=-30m A ;IB=0 2SB1605A IC=-3A ;IB=-0.375A IC=-3A ; VCE=-4V VCE=-60V; VBE=0 CONDITIONS SYMBOL 2SB1605 2SB1605A MIN -60 TYP. UNIT V(BR)CEO Collector-emitter breakdown voltage V -80 -1.2 -1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter on voltage 2SB1605 2SB1605A 2SB1605 2SB1605A ICES Collector cut-off current -200 VCE=-80V; VBE=0 VCE=-30V; IB=0 -300 VCE=-60V; IB=0 VEB=-5V; IC=0 IC=-1A ; VCE=-4V IC=-3A ; VCE=-4V IC=-0.5A ; VCE=-10V 70 10 30 -1 250 µA ICEO Collector cut-off current µA IEBO h FE-1 h FE-2 f T Emitter cut-off current DC current gain DC current gain Transition frequency m A MHz Switching times ton tstg tf Turn-on time Storage time Fall time IC=-1A; IB1=-IB2=-0.1A 0.5 1.2 0.3 µs µs µs h FE-1 Classifications Q 70-150 P 120-250 Savant IC Semiconductor .. Product Specification Silicon PNP Power...