The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
Power Transistors
2SB1605, 2SB1605A
Silicon PNP epitaxial planar type
For low-freauency power amplification
s Features
q q q
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
High forward current transfer ratio hFE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings –60 –80 –60 –80 –5 –5 –3 35 2 150 –55 to +150 Unit
Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.1±0.2 8.0±0.2 Solder Dip
s Absolute Maximum Ratings
15.0±0.3
3.0±0.2
13.7–0.2
+0.5
V
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.
2SB1605A Datasheet
