2SB1605
2SB1605 is Silicon PNP Transistor manufactured by Panasonic.
Features q q q
Unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
High forward current transfer ratio h FE which has satisfactory linearity Low collector to emitter saturation voltage VCE(sat) Full-pack package with outstanding insulation, which can be installed to the heat sink with one screw (TC=25˚C)
Ratings
- 60
- 80
- 60
- 80
- 5
- 5
- 3 35 2 150
- 55 to +150 Unit
Parameter Collector to base voltage Collector to 2SB1605 2SB1605A 2SB1605
Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
4.1±0.2 8.0±0.2 Solder Dip s Absolute Maximum Ratings
15.0±0.3
3.0±0.2
13.7- 0.2
+0.5
1.2±0.15 1.45±0.15 0.75±0.1 2.54±0.2 5.08±0.4
2.6±0.1 0.7±0.1 emitter voltage 2SB1605A Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature
V V A A W ˚C ˚C
7°
1 2 3
1:Base 2:Collector 3:Emitter TO- 220E Full Pack Package s Electrical Characteristics
Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector to emitter voltage 2SB1605 2SB1605A 2SB1605 2SB1605A 2SB1605 2SB1605A
(TC=25˚C)
Symbol ICES ICEO IEBO VCEO h FE1- h FE2 VBE VCE(sat) f T ton tstg tf IC =
- 1A, IB1 =
- 0.1A, IB2 = 0.1A Conditions VCE =
- 60V, VBE = 0 VCE =
- 80V, VBE = 0 VCE =
- 30V, IB = 0 VCE =
- 60V, IB = 0 VEB =
- 5V, IC = 0 IC =
- 30m A, IB = 0 VCE =
- 4V, IC =
- 1A VCE...