Leaded Schottky Barrier Rectifiers SB120-G Thru. S.
Panasonic Semiconductor
5
2SB1606 - Silicon PNP Transistor
Power Transistors 2SB1606 Silicon PNP epitaxial planar type For power switching Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.1 9.9±0.3 2.9±0.2 4.1.
Sanyo Semicon Device
5
SB160-09R - 90V/ 16A Rectifier
Ordering number :EN2500 SB160-09R Schottky Barrier Diode (Twin Type · Cathode Common) 90V, 16A Rectifier Applications · High frequency rectification.
Sanyo Semicon Device
5
SB160-18 - 180V/ 16A Rectifier
Ordering number :EN2581A SB160-18 Schottky Barrier Diode (Twin Type · Cathode Common) 180V, 16A Rectifier Applications · High frequency rectificatio.
STMicroelectronics
4
STUSB1600 - USB Type-C controller
STUSB1600 USB Type-CTM controller with high voltage protection Datasheet - production data • Temperature range: -40 °C up to 105 °C Features • Typ.
Sanyo Semicon Device
4
SB160-09 - 90V/ 16A Rectifier
Ordering number :EN2688 SB160-09 Schottky Barrier Diode (Twin Type · Cathode Common) 90V, 16A Rectifier Applications · High frequency rectification .
WON-TOP
4
SB160 - 1.0A SCHOTTKY BARRIER DIODE
® WON-TOP ELECTRONICS Features Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 30A Peak Low Power L.
GOOD-ARK Electronics
3
SB160 - SCHOTTKY BARRIER RECTIFIER
Features • Metal-Semiconductor junction with guardring • Epitaxial construction • Low forward voltage drop • High current capability • The plastic mat.
Shanghai Sunrise Electronics
3
SB160 - SCHOTTKY BARRIER RECTIFIER
SHANGHAI SUNRISE ELECTRONICS CO., LTD. SB120 THRU SB160 SCHOTTKY BARRIER RECTIFIER VOLTAGE: 20 TO 60V CURRENT: 1.0A FEATURES • Epitaxial construction .
STMicroelectronics
3
STUSB1602 - USB Type-C controller
STUSB1602 Datasheet USB Type-C™ controller with TX/RX line driver and BMC Device summary Order code STUSB1602AQTR Power role SOURCE, SINK, DRP Pa.
SavantIC
3
2SB1607 - SILICON POWER TRANSISTOR
SavantIC Semiconductor www.DataSheet4U.com Product Specification Silicon PNP Power Transistors 2SB1607 DESCRIPTION ·With TO-220F package ·Large co.
GALAXY ELECTRICAL
3
SB160S - SCHOTTKY BARRIER RECTIFIERS
BLGALAXY ELECTRICAL SB120S- - - SB1100S SCHOTTKY BARRIER RECTIFIERS FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low.
PAN JIT
3
SB160S - SCHOTTKY BARRIER RECTIFIERS
SB120S~SB1100S SCHOTTKY BARRIER RECTIFIERS VOLTAGE 20 to 100 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammab.
INCHANGE
3
2SB1606 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·High Collector current Ic ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -4A .
INCHANGE
3
2SB1603 - PNP Transistor
isc Silicon PNP Power Transistor DESCRIPTION ·High-speed Switching ·Low Collector to Emitter Saturation Voltage : VCE(sat)= -0.5V(Max.)@IC= -2A ·Full.
Panasonic Semiconductor
2
2SB1603A - Silicon PNP Transistor
Power Transistors 2SB1603, 2SB1603A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Features.
Panasonic Semiconductor
2
2SB1604 - Silicon PNP Transistor
Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 4.6±0.2 φ3.2±0.1 9.9±0.3 .
Panasonic Semiconductor
2
2SB1604A - Silicon PNP Transistor
Power Transistors 2SB1604, 2SB1604A Silicon PNP epitaxial planar type For low-voltage switching Unit: mm s Features q q q 4.6±0.2 φ3.2±0.1 9.9±0.3 .
Panasonic Semiconductor
2
2SB1607 - Silicon PNP Transistor
Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 s Features q q q q φ3.2±0.
Diodes Incorporated
2
SB160 - 1.0A SCHOTTKY BARRIER RECTIFIER
SB120 - SB160 1.0A SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Low .
