SB2100 Datasheet | Specifications & PDF Download

® WON-TOP ELECTRONICS Features  Schottky Barrier Chip  Guard Ring for Transient and ESD Protection  Surge Overload Rating to 50A Peak  Low Power L

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SANGDEST MICROELECTRONICS Technical Data Data Sheet N0154 Rev. A Applications: SB2100 SCHOTTKY RECTIFIER Switching power supply Converters Free-Wh

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SMD Type Schottky Diodes SB220 ~ SB2200 Diodes ■ Features ● Metal silicon junction,majority carrier conduction ● Low power loss,high efficiency ● H

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Z ibo Seno Electronic Engineering Co., Ltd. SB220 – SB2200 2.0A SCHOTTKY BARRIER DIODE Features Schottky Barrier Chip Guard Ring Die Construc

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ELECTRONIC SB240 ~ SB2200 Power Schottky Rectifier - 2Amp 40~200Volt □ Features -Low forward voltage drop -High current capability -High reliabilit

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SB220 THRU SB2200 2 .0 A M P SC HO TTKY BA RRIER REC TIFIERS o FEATURES * Low forward voltage drop * High current capability * High reliability * Hi

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SB220 THRU SB2100 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 100 Volts Forward Current - 2.0 Amperes DO-204AL 0.107(2.70) 0.080(2.00) DIA

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Schottky Barrier Rectifier 2A, 20~200V DO-15 SB220 to SB2200 FEATURE  Operating Temperature: -55 ~ 150ºC  High Current and Surge Capability  Low

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LESHAN RADIO COMPANY, LTD. SB220 thru SB2100 1.Feature & Dimensions Schottky Barrier Rectifiers * Plastic package has Underwriters Laboratory Flam

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SB220 - SB2150 2 Amp. Schottky Barrier Rectifiers Pb DO-15 (Plastic) Voltage 20 V to 150 V Current 2.0 A • Low power loss, high efficiency. • Hi

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SCHOTTKY BARRIER RECTIFIER SB220 ~ SB2100 Schottky Barrier Rectifier Features • Guarding for overvoltage protection • Low forward voltage • Low pow

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Leaded Schottky Barrier Rectifiers SB220-G Thru. SB2100-G Voltage: 20 to 100 V Current: 2.0 A RoHS Device Features -Low drop down voltage. -Metal-Semi

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1.0(25.4) MAX. 0.300(7.6) 0.230(5.8) 1.0(25.4) MAX. SB220 THRU SB2200 SCHOTTKY BARRIER RECTIFIER Reverse Voltage - 20 to 200 Volts Forward Current -

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SCHOTTKY BARRIER RECTIFIERS FEATURES Metal-Semiconductor junction with guard ring Epitaxial construction Low forward voltage drop High current capabil

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