SCT30N120 Silicon carbide Power MOSFET 1200 V, 45.
STMicroelectronics
SCT30N120 - Silicon carbide Power MOSFET
SCT30N120 Silicon carbide Power MOSFET 1200 V, 45 A, 90 mΩ (typ., TJ = 150 °C) in an HiP247™ package Datasheet - production data Features Very tig.
