SCT30N120

Silicon carbide Power MOSFET

STMicroelectronics

SCT30N120 Features

* Very tight variation of on-resistance vs. temperature

* Very high operating junction temperature capability (TJ = 200 °C)

* Very fast and robust intrinsic body diode

* Low capacitance Applications Figure 1: Internal schematic diagram

* Solar inverters, UPS

* Motor drives

SCT30N120 General Description

This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials. This results in unsurpassed on-resistance per unit area and very good switching performance almost independent of temperature. The outstanding thermal properties of the SiC materia.

SCT30N120 Datasheet (785.31 KB)